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K7P803611B-HC30 from SAMSUNG

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K7P803611B-HC30

Manufacturer: SAMSUNG

256Kx36 & 512Kx18 Synchronous Pipelined SRAM

Partnumber Manufacturer Quantity Availability
K7P803611B-HC30,K7P803611BHC30 SAMSUNG 200 In Stock

Description and Introduction

256Kx36 & 512Kx18 Synchronous Pipelined SRAM The part **K7P803611B-HC30** is a memory component manufactured by **SAMSUNG**. Below are the factual details from Ic-phoenix technical data files:

### **Specifications:**
- **Manufacturer:** SAMSUNG  
- **Part Number:** K7P803611B-HC30  
- **Type:** DRAM (Dynamic Random-Access Memory)  
- **Density:** 8Gb (Gigabit)  
- **Speed:** DDR3  
- **Package:** FBGA (Fine-pitch Ball Grid Array)  
- **Voltage:** 1.35V (Low Voltage DDR3L)  
- **Organization:** 1G x 8 (1 Gigabit x 8)  
- **Operating Temperature:** Commercial (0°C to 85°C) or Industrial (-40°C to 85°C) depending on variant  

### **Descriptions & Features:**
- Designed for **low-power applications** with **1.35V operation** (compatible with 1.5V DDR3).  
- **High-speed data transfer** with DDR3 interface.  
- **FBGA packaging** for compact and efficient PCB integration.  
- Used in **consumer electronics, networking devices, and embedded systems**.  
- Supports **auto-refresh and self-refresh** modes for power efficiency.  

This information is based strictly on available technical documentation for the **K7P803611B-HC30** from SAMSUNG.

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