| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| PTFA220121M |
INFINEON|Infineon |
N/a |
332 |
 |
High Power RF LDMOS Field Effect Transistor 12 W, 700-2200 MHz |
PTFA220121M V1 INFINEON
PTFA240451E INFINEON, Thermally-Enhanced High Power RF LDMOS FET 45 W, 2420-2480 MHz
PTFA241301A INFINEON
PTFA241301E INFINEON, Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420-2480 MHz
PTFA260451E INFINEON, Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62-2.68 GHz
PTFA261301E INFINEON, Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62-2.68 GHz
PTFA261301EV1 INFINEON
PTFA261301F ERICSSON, Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62-2.68 GHz
PTFA261702E INFINEON, Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 - 2700 MHz
PTFB072401FL INFINEON
PTFB091507FH INFINEON, Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920-960 MHz
PTFB182012F INFINEON
PTFB182012FC INFINEON
PTFB182501BL INFINEON
PTFA220121M , High Power RF LDMOS Field Effect Transistor 12 W, 700-2200 MHz
PTFB182503EL , Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805-1880 MHz
PTFB183404E , High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz
PTFM04BC222Q2N34B0 , POSISTOR for Circuit Protection
PTGL07AR4R6H2B51A0 , PTC Thermistors for Overcurrent Protection / for Inrush Current Suppression / for Overheat Sensing Lead Type
R1172H121B , POWER MANAGEMENT ICs MARK INFORMATIONS
R1180D261B , dlSERIES MARK SPECIFICATION
R1180N181B , 150mA LDO REGULATOR
