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R1LV1616HSA-4SI from MIT

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R1LV1616HSA-4SI

Manufacturer: MIT

Wide Temperature Range Version 16 M SRAM (1-Mword × 16-bit / 2-Mword × 8-bit)

Partnumber Manufacturer Quantity Availability
R1LV1616HSA-4SI,R1LV1616HSA4SI MIT 421 In Stock

Description and Introduction

Wide Temperature Range Version 16 M SRAM (1-Mword × 16-bit / 2-Mword × 8-bit) **Introduction to the R1LV1616HSA-4SI Electronic Component**  

The **R1LV1616HSA-4SI** is a high-performance **16Mb (1M x 16) low-voltage CMOS static random-access memory (SRAM)** designed for applications requiring fast access times and low power consumption. This component operates at a **1.8V power supply**, making it suitable for battery-powered and energy-efficient systems.  

Featuring a **4ns access time**, the R1LV1616HSA-4SI ensures rapid data retrieval, making it ideal for embedded systems, networking equipment, and high-speed computing applications. Its **asynchronous operation** allows for straightforward integration into existing designs without complex timing constraints.  

The SRAM is housed in a **48-pin TSOP-II package**, providing a compact footprint while maintaining reliable performance. With a **wide operating temperature range (-40°C to +85°C)**, it is well-suited for industrial and automotive environments where stability under varying conditions is critical.  

Key advantages of the R1LV1616HSA-4SI include **low standby current**, enhancing power efficiency in idle states, and **fully static operation**, eliminating the need for refresh cycles. These features make it a dependable choice for applications requiring persistent, high-speed memory access.  

Engineers and designers seeking a **low-voltage, high-speed SRAM solution** will find the R1LV1616HSA-4SI a robust option for modern electronic systems. Its balance of performance, power efficiency, and reliability ensures compatibility with a broad range of advanced technologies.

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