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SI9988DQ-T1-E3 from VISHAY

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SI9988DQ-T1-E3

Manufacturer: VISHAY

Buffered H-Bridge

Partnumber Manufacturer Quantity Availability
SI9988DQ-T1-E3,SI9988DQT1E3 VISHAY 617 In Stock

Description and Introduction

Buffered H-Bridge The SI9988DQ-T1-E3 is a dual N-channel MOSFET manufactured by Vishay.  

### **Specifications:**  
- **Manufacturer:** Vishay  
- **Part Number:** SI9988DQ-T1-E3  
- **Configuration:** Dual N-Channel  
- **Drain-Source Voltage (VDSS):** 20V  
- **Gate-Source Voltage (VGS):** ±12V  
- **Continuous Drain Current (ID):** 4.5A per channel (at TC = 25°C)  
- **Pulsed Drain Current (IDM):** 18A  
- **On-Resistance (RDS(on)):** 45mΩ (max) at VGS = 4.5V  
- **Power Dissipation (PD):** 2.5W (at TA = 25°C)  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  
- **Package:** PowerPAK® SO-8  

### **Descriptions and Features:**  
- Designed for high-efficiency power management applications.  
- Low on-resistance (RDS(on)) for reduced conduction losses.  
- Optimized for synchronous buck converters and motor control.  
- Lead (Pb)-free and RoHS compliant.  
- Halogen-free according to IEC 61249-2-21.  

This information is based on Vishay's datasheet for the SI9988DQ-T1-E3.

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