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HFA16TB120

Manufacturer: IR

1200V 16A HEXFRED Discrete Diode in a TO-220AC package
Partnumber Manufacturer Quantity Availability
HFA16TB120 IR 146 In Stock

Description and Introduction

1200V 16A HEXFRED Discrete Diode in a TO-220AC package The part **HFA16TB120** is a high-frequency IGBT (Insulated Gate Bipolar Transistor) module manufactured by **Hitachi**.  

### **Key Specifications:**  
- **Voltage Rating (Vces):** 1200V  
- **Current Rating (Ic):** 16A  
- **Configuration:** Dual IGBT (half-bridge)  
- **Package Type:** Module  
- **Switching Frequency:** Designed for high-frequency applications  
- **Applications:** Used in power electronics such as inverters, motor drives, and industrial power supplies  

For exact datasheet details, refer to the official Hitachi documentation.

Application Scenarios & Design Considerations

1200V 16A HEXFRED Discrete Diode in a TO-220AC package

Alternative Part Number

  • STTH1602CT --: Dual ultrafast rectifier with 200V/16A rating, similar forward voltage and recovery characteristics, suitable drop-in for high-frequency rectification.
  • VS-16ETH06 --: Hyperfast 600V/16A diode with low recovery charge, close electrical match for the HFA16TB120 in switching power supplies.
  • IDP16E60 --: 600V/16A ultrafast diode with comparable trr and thermal performance, usable as an alternative in rectifier circuits.
  • DSEI16-12A --: Fast recovery 1200V/16A diode with comparable current rating and rugged construction, usable where higher voltage margin is acceptable.

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