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HFA90NH40 from IR,International Rectifier

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HFA90NH40

Manufacturer: IR

400V 90A HEXFRED Discrete Diode in a D-67 Half-Pak package
Partnumber Manufacturer Quantity Availability
HFA90NH40 IR 174 In Stock

Description and Introduction

400V 90A HEXFRED Discrete Diode in a D-67 Half-Pak package The HFA90NH40 is a power MOSFET module manufactured by Hitachi. Here are the key infrared (IR) specifications from Ic-phoenix technical data files:  

- **Infrared Wavelength Range**: Not explicitly specified in the provided data.  
- **Infrared Emitter/Detector Compatibility**: Not mentioned.  
- **Thermal Resistance (Junction-to-Case)**: 0.25°C/W.  
- **Operating Temperature Range**: -40°C to 150°C.  

No additional IR-specific details (such as spectral response or IR-related performance metrics) are provided in the available documentation.

Application Scenarios & Design Considerations

400V 90A HEXFRED Discrete Diode in a D-67 Half-Pak package

Alternative Part Number

  • STTH2002DI --: 200A ultrafast recovery diode with similar low forward voltage and fast switching, suitable for high-current rectification replacing the HFA90NH40.
  • VS-90EPS16 --: 90A ultrafast rectifier diode with comparable current rating and fast recovery characteristics, a direct functional substitute.
  • DSEI60-06A --: 60A fast recovery epitaxial diode with similar switching performance; usable where slightly lower current is acceptable.

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