HMC326MS8GE

Partnumber	Manufacturer	Quantity	Availability
HMC326MS8GE Manufacturer: HITTITE GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz
HMC326MS8GE	HITTITE	399	In Stock
Description and Introduction GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz The HMC326MS8GE is a GaAs MMIC distributed power amplifier manufactured by HITTITE. Here are its key specifications: - Frequency Range: DC to 20 GHz - Gain: 10 dB typical - Output Power (P1dB): 20 dBm typical - Output IP3: 30 dBm typical - Supply Voltage: +5V - Current Consumption: 120 mA typical - Package: 8-lead MSOP - Operating Temperature Range: -40°C to +85°C - Applications: Test equipment, broadband communications, military, and space systems This information is based on the manufacturer's datasheet.
Application Scenarios & Design Considerations GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz
Alternative Part Number ADL5320ARKZ-R7 --: Analog Devices absorbed Hittite; this is a comparable RF gain block amplifier in the same frequency class and is a natural drop-in style replacement. PMA2-43+ --: Wideband MMIC amplifier covering a similar frequency range with comparable gain, available in a small surface-mount package as a functional substitute. BGA824N6 --: Low-noise wideband RF amplifier with similar gain and frequency coverage, suitable as an alternative gain block in RF front-end designs.

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HMC326MS8GE from HITTITE