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HMC413QS16GE from HITTITE

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HMC413QS16GE

Manufacturer: HITTITE

GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz

Partnumber Manufacturer Quantity Availability
HMC413QS16GE HITTITE 671 In Stock

Description and Introduction

GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz The HMC413QS16GE is a GaAs MMIC I/Q downconverter manufactured by HITTITE (now part of Analog Devices). Here are its key specifications:

- **Frequency Range**: 4.5 GHz to 6.0 GHz (RF), 3.5 GHz to 5.0 GHz (LO)  
- **Conversion Gain**: 7 dB (typical)  
- **Noise Figure**: 12 dB (typical)  
- **Input IP3**: +18 dBm (typical)  
- **LO to RF Isolation**: 35 dB (typical)  
- **LO Drive Level**: +10 dBm (typical)  
- **Supply Voltage**: +5V  
- **Current Consumption**: 100 mA (typical)  
- **Package**: 16-lead QSOP  

It features an integrated LO amplifier, I/Q demodulator, and IF amplifiers, designed for applications such as point-to-point radios and satellite communications.

Application Scenarios & Design Considerations

GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz

Alternative Part Number

  • ADL5542ACPZ-R7 --: Analog Devices acquired Hittite; this is a similar broadband gain block amplifier in a compact LFCSP package, suitable as a functional substitute for general RF gain stages.
  • PGA-103+ --: Wideband MMIC amplifier with comparable gain and frequency range, available in SOT-89 package, offering a drop-in style alternative from a different series.
  • BGA7211,115 --: Low-noise wideband RF amplifier IC with similar gain characteristics, providing a cross-manufacturer alternative for RF front-end designs.

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