HN1A01FE

Partnumber	Manufacturer	Quantity	Availability
HN1A01FE Manufacturer: TOSHIBA Transistor for low frequency small-signal amplification 2 in 1
HN1A01FE	TOSHIBA	8000	In Stock
Description and Introduction Transistor for low frequency small-signal amplification 2 in 1 The part HN1A01FE is manufactured by TOSHIBA. It is a photocoupler (optocoupler) with the following specifications: - Type: Photocoupler with a GaAlAs infrared LED and a phototransistor - Isolation Voltage: 5000 Vrms (min) - Collector-Emitter Voltage (VCEO): 80 V - Current Transfer Ratio (CTR): 50% (min) at IF = 5 mA, VCE = 5 V - Input Forward Current (IF): 50 mA (max) - Operating Temperature Range: -55°C to +110°C - Package: DIP4 (4-pin Dual In-line Package) This device is commonly used for signal isolation in electronic circuits.
Application Scenarios & Design Considerations Transistor for low frequency small-signal amplification 2 in 1
Alternative Part Number MMDT3904 --: Dual NPN transistor in a small SOT-563/SOT-363 package, a common functional substitute for the dual-transistor HN1A01FE in switching and general-purpose applications. BC847BS --: Dual NPN matched transistor pair in SOT-363, widely available and suitable for low-power switching circuits where the original Toshiba part is used. UMH3N --: Dual NPN digital transistor in a compact package with built-in resistors, offering a similar small-signal switching function and easy drop-in evaluation.

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HN1A01FE from TOSHIBA