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HN1D03FU from TOSHIBA

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HN1D03FU

Manufacturer: TOSHIBA

Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
Partnumber Manufacturer Quantity Availability
HN1D03FU TOSHIBA 15000 In Stock

Description and Introduction

Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application The part HN1D03FU is manufactured by TOSHIBA. It is a power MOSFET with the following specifications:  

- **Type**: N-channel  
- **Drain-Source Voltage (VDSS)**: 30V  
- **Drain Current (ID)**: 60A (continuous)  
- **RDS(on) (Max)**: 3.5mΩ (at VGS = 10V)  
- **Gate-Source Voltage (VGS)**: ±20V  
- **Power Dissipation (PD)**: 50W  
- **Package**: TO-252 (DPAK)  

This MOSFET is designed for high-efficiency power switching applications.  

(Note: Always verify specifications with the latest datasheet from TOSHIBA.)

Application Scenarios & Design Considerations

Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application

Alternative Part Number

  • BAV99 --: Dual series switching diode in SOT-23, functionally equivalent to the HN1D03FU dual diode and widely available.
  • MMBD4148SE --: Dual series-connected small-signal diode in SOT-23 with similar voltage and current ratings, suitable drop-in replacement.
  • DAN202 --: Dual series switching diode in SOT-23 package with comparable electrical characteristics for general switching applications.

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