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HN1D04FU from TOSHIBA

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HN1D04FU

Manufacturer: TOSHIBA

Switching diode
Partnumber Manufacturer Quantity Availability
HN1D04FU TOSHIBA 76000 In Stock

Description and Introduction

Switching diode The part HN1D04FU is manufactured by TOSHIBA. It is a digital transistor (resistor built-in transistor) with the following specifications:  

- **Type**: NPN  
- **Maximum Collector-Base Voltage (VCBO)**: 50V  
- **Maximum Collector-Emitter Voltage (VCEO)**: 50V  
- **Maximum Emitter-Base Voltage (VEBO)**: 5V  
- **Maximum Collector Current (IC)**: 100mA  
- **Total Power Dissipation (PT)**: 150mW  
- **DC Current Gain (hFE)**: 82 to 390 (depending on conditions)  
- **Built-in Resistor Values**:  
  - R1 (Base resistor): 10kΩ  
  - R2 (Base-Emitter resistor): 10kΩ  
- **Package**: SOT-363 (US6)  

This transistor is designed for switching and amplification in small-signal applications.

Application Scenarios & Design Considerations

Switching diode

Alternative Part Number

  • BAV99 --: Dual series switching diode in SOT-23, functionally equivalent to the dual-diode HN1D04FU and widely available.
  • MMBD4148SE --: Dual high-speed switching diode in SOT-23 with similar forward voltage and current ratings, suitable drop-in replacement.
  • DAN202 --: Dual switching diode in SOT-23 with comparable electrical characteristics, commonly used as an alternative to Toshiba dual-diode parts.

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