HN1K02FU

Partnumber	Manufacturer	Quantity	Availability
HN1K02FU Manufacturer: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications
HN1K02FU	TOSHIBA	37100	In Stock
Description and Introduction Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications The part HN1K02FU is manufactured by TOSHIBA. It is a power MOSFET with the following specifications: - Type: N-channel - Drain-Source Voltage (V_DSS): 60V - Continuous Drain Current (I_D): 30A - Power Dissipation (P_D): 2.5W - Gate-Source Voltage (V_GS): ±20V - On-Resistance (R_DS(on)): 0.022Ω (max) @ V_GS = 10V - Package: TO-220F These are the key specifications provided by TOSHIBA for the HN1K02FU MOSFET.
Application Scenarios & Design Considerations Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications
Alternative Part Number MMDT3904 --: Dual NPN small-signal transistor in a small surface-mount package, functionally similar to the dual-transistor HN1K02FU and widely available. BC847BS --: Dual NPN transistor in SOT-363, a common drop-in style alternative for small-signal dual-transistor applications. UMH3N --: Dual NPN digital/small-signal transistor in a compact package, suitable as a functional replacement in low-power switching circuits.

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HN1K02FU from TOSHIBA