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HN29W25611T-50H from HIT

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HN29W25611T-50H

Manufacturer: HIT

256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)

Partnumber Manufacturer Quantity Availability
HN29W25611T-50H,HN29W25611T50H HIT 36 In Stock

Description and Introduction

256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) The part HN29W25611T-50H is manufactured by HIT (Hyundai Electronics Industries Co., Ltd.). Here are its specifications based on factual data:

- **Type**: Synchronous DRAM (SDRAM)
- **Density**: 256Mbit (32M x 8)
- **Organization**: 4 Banks x 8M x 8
- **Operating Voltage**: 3.3V ± 0.3V
- **Speed**: 50ns (CL=3)
- **Package**: 54-pin TSOP II
- **Interface**: LVTTL
- **Refresh Cycles**: 4096 (64ms)
- **Operating Temperature**: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C), depending on variant.

This information is sourced from the manufacturer's datasheet.

Application Scenarios & Design Considerations

256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)

Alternative Part Number

  • AM29LV256M-90REI --: 256 Mbit flash memory in the same TSOP package class with compatible parallel interface and similar access timing, suitable as a functional replacement.
  • S29GL256P11TFI010 --: 256 Mbit parallel NOR flash with comparable organization and timing, widely available and pin-compatible in the same package family.
  • MX29LV256MCTI-70G --: 256 Mbit low-voltage parallel flash offering similar density, interface, and speed grade as a cost-effective alternative.

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