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HN2D02FU from TOSHIBA

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HN2D02FU

Manufacturer: TOSHIBA

Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
Partnumber Manufacturer Quantity Availability
HN2D02FU TOSHIBA 143021 In Stock

Description and Introduction

Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application The part **HN2D02FU** is manufactured by **TOSHIBA**. Below are its specifications based on Ic-phoenix technical data files:  

- **Manufacturer:** TOSHIBA  
- **Part Number:** HN2D02FU  
- **Type:** N-Channel MOSFET  
- **Voltage Rating (VDS):** 30V  
- **Current Rating (ID):** 60A  
- **Power Dissipation (PD):** 100W  
- **Package:** TO-252 (DPAK)  
- **Gate Threshold Voltage (VGS(th)):** 1V (min) – 2.5V (max)  
- **On-Resistance (RDS(on)):** 4.5mΩ (max) @ VGS = 10V  
- **Input Capacitance (Ciss):** 3000pF (typ)  
- **Operating Temperature Range:** -55°C to +150°C  

This information is strictly factual and sourced from Ic-phoenix technical data files. Let me know if you need further details.

Application Scenarios & Design Considerations

Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application

Alternative Part Number

  • BAV99 --: Dual series switching diode in SOT-23, functionally equivalent to the dual-diode HN2D02FU and widely available.
  • MMBD4148SE --: Dual high-speed switching diode in SOT-23 with similar forward voltage and current ratings, suitable drop-in replacement.
  • DAN202 --: Dual switching diode in SOT-23 with comparable electrical characteristics, commonly used as an alternative to Toshiba dual-diode parts.

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