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HN2S01F from TOSHIBA

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HN2S01F

Manufacturer: TOSHIBA, TOS

Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application
Partnumber Manufacturer Quantity Availability
HN2S01F TOSHIBA, TOS 18000 In Stock

Description and Introduction

Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application The part HN2S01F is manufactured by Toshiba (TOS). Below are the specifications as per Ic-phoenix technical data files:  

- **Manufacturer**: Toshiba (TOS)  
- **Part Number**: HN2S01F  
- **Type**: High-speed switching diode  
- **Package**: SOD-323 (SC-76)  
- **Maximum Reverse Voltage (VR)**: 40V  
- **Average Rectified Forward Current (IO)**: 200mA  
- **Peak Forward Surge Current (IFSM)**: 500mA  
- **Forward Voltage (VF)**: 1V (at 10mA)  
- **Reverse Recovery Time (trr)**: 4ns (typical)  
- **Operating Temperature Range**: -55°C to +125°C  

This information is strictly based on the available data.

Application Scenarios & Design Considerations

Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application

Alternative Part Number

  • 1SS400 --: Small-signal switching diode with similar low forward voltage and fast switching characteristics, commonly used as a direct substitute in signal detection and switching circuits.
  • BAV99 --: Dual small-signal switching diode in SOT-23 with comparable current and voltage ratings, widely available and suitable for general switching and clamping applications.
  • 1N4148W --: Surface-mount small-signal switching diode with similar electrical ratings and fast recovery, a common generic replacement for low-power signal diodes.
  • BAS40-04 --: Dual Schottky diode in SOT-23 with similar low forward voltage and small-signal switching characteristics, widely available and pin-compatible in function.
  • BAT54S --: Dual series Schottky diode in SOT-23 offering comparable low VF and fast switching, a common drop-in functional replacement for small-signal Schottky pairs.
  • RB751S-40 --: 40V small-signal Schottky diode with low forward voltage and fast recovery, suitable as a functional substitute where a single Schottky device is acceptable.

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