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HN2S01FU from TOSHIBA

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HN2S01FU

Manufacturer: TOSHIBA

Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application
Partnumber Manufacturer Quantity Availability
HN2S01FU TOSHIBA 76000 In Stock

Description and Introduction

Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application The part HN2S01FU is manufactured by TOSHIBA. It is a dual N-channel MOSFET with a drain-source voltage (VDSS) of 30V, a continuous drain current (ID) of 10A, and a power dissipation (PD) of 2W. The device features a low on-resistance (RDS(on)) of 18mΩ (typical) at VGS=10V. It is housed in a SOP-8 package.  

Key specifications:  
- **Manufacturer:** TOSHIBA  
- **Type:** Dual N-channel MOSFET  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 10A  
- **Power Dissipation (PD):** 2W  
- **On-Resistance (RDS(on)):** 18mΩ (typical) at VGS=10V  
- **Package:** SOP-8

Application Scenarios & Design Considerations

Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application

Alternative Part Number

  • BAS16 --: Small-signal switching diode with similar low forward voltage and fast switching, widely available and pin-compatible in SOT-23 packages.
  • 1N4148W --: Surface-mount fast switching diode with comparable current and voltage ratings, commonly used as a general replacement in small-signal circuits.
  • MMBD4148 --: Dual/ single small-signal switching diode in SOT-23 with similar electrical characteristics, suitable for signal switching and clamping applications.

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