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HN2S03FE from TOSHIBA

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HN2S03FE

Manufacturer: TOSHIBA

Small-signal Schottky barrier diode
Partnumber Manufacturer Quantity Availability
HN2S03FE TOSHIBA 12000 In Stock

Description and Introduction

Small-signal Schottky barrier diode The part **HN2S03FE** is manufactured by **TOSHIBA**. Below are the specifications based on available information:  

- **Type**: Power MOSFET  
- **Configuration**: N-Channel  
- **Package**: SOP-8  
- **Voltage Rating (VDS)**: 30V  
- **Current Rating (ID)**: 6.5A  
- **Power Dissipation (PD)**: 2W  
- **On-Resistance (RDS(on))**: 0.035Ω (max)  
- **Gate Threshold Voltage (VGS(th))**: 1V (min) - 2.5V (max)  
- **Input Capacitance (Ciss)**: 580pF (typical)  
- **Operating Temperature Range**: -55°C to +150°C  

This information is sourced from TOSHIBA's official documentation. For detailed datasheets, refer to TOSHIBA's official website or authorized distributors.

Application Scenarios & Design Considerations

Small-signal Schottky barrier diode

Alternative Part Number

  • BAV99 --: Dual series switching diode in SOT-23, functionally similar to the HN2S03FE small-signal diode and widely available.
  • MMBD4148SE --: Dual high-speed switching diode in SOT-23 with comparable forward voltage and current ratings, suitable drop-in replacement.
  • DAN202 --: Dual small-signal switching diode in SOT-23 with similar electrical characteristics and pinout.

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