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HN4C51J from TOSHIBA

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HN4C51J

Manufacturer: TOSHIBA

Transistor for low frequency small-signal amplification 2 in 1
Partnumber Manufacturer Quantity Availability
HN4C51J TOSHIBA 9000 In Stock

Description and Introduction

Transistor for low frequency small-signal amplification 2 in 1 The part **HN4C51J** is manufactured by **TOSHIBA**.  

Here are its key specifications:  
- **Type**: N-channel MOSFET  
- **Package**: TO-220SIS  
- **Drain-Source Voltage (VDSS)**: 60V  
- **Continuous Drain Current (ID)**: 50A  
- **Power Dissipation (PD)**: 50W  
- **Gate-Source Voltage (VGS)**: ±20V  
- **On-Resistance (RDS(on))**: 5.5mΩ (max) at VGS = 10V  
- **Threshold Voltage (VGS(th))**: 1.0V (min) to 2.5V (max)  

These details are based on TOSHIBA's official datasheet for the HN4C51J MOSFET.

Application Scenarios & Design Considerations

Transistor for low frequency small-signal amplification 2 in 1

Alternative Part Number

  • BC847B --: General-purpose NPN small-signal transistor in SOT-23, widely used as a functional substitute for the HN4C51J dual NPN transistor in low-current switching and amplification.
  • MMDT3904 --: Dual NPN transistor in SOT-363 with similar small-signal switching characteristics, offering a comparable multi-device package alternative.
  • 2N3904 --: Classic through-hole NPN small-signal transistor with well-known switching and amplification specs, suitable where board layout allows a leaded replacement.

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