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HN58V65AFP-10 from RENESAS

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HN58V65AFP-10

Manufacturer: RENESAS, RENESAS Pb-free, HITACHI, HITACIH, HIT, HIT

64 k EEPROM (8-kword × 8-bit) Ready/Busy Function, RES Function (HN58V66A)
Partnumber Manufacturer Quantity Availability
HN58V65AFP-10,HN58V65AFP10 RENESAS, RENESAS Pb-free, HITACHI, HITACIH, HIT, HIT 19195 In Stock

Description and Introduction

64 k EEPROM (8-kword × 8-bit) Ready/Busy Function, RES Function (HN58V66A) The **HN58V65AFP-10** is a high-performance **EEPROM (Electrically Erasable Programmable Read-Only Memory)** integrated circuit designed for reliable non-volatile data storage in a wide range of electronic applications. Manufactured with advanced CMOS technology, this component offers a storage capacity of **64Kbits (8K x 8 bits)**, making it suitable for systems requiring moderate memory retention with low power consumption.  

Operating at a **5V supply voltage**, the HN58V65AFP-10 features a fast **100ns access time**, ensuring efficient read and write operations. It supports **serial I²C interface communication**, enabling seamless integration with microcontrollers and other digital systems. The device also includes built-in **write protection** and **data retention** capabilities, ensuring long-term reliability even in demanding environments.  

With an **endurance rating of 1 million write cycles** and a **data retention period of up to 100 years**, this EEPROM is ideal for applications such as **industrial automation, consumer electronics, automotive systems, and embedded computing**. Its **FP-10 package** ensures compactness and ease of PCB mounting while maintaining robust performance.  

Engineers and designers favor the HN58V65AFP-10 for its balance of speed, durability, and power efficiency, making it a dependable choice for modern electronic designs requiring non-volatile memory solutions.

Application Scenarios & Design Considerations

64 k EEPROM (8-kword × 8-bit) Ready/Busy Function, RES Function (HN58V66A)

Alternative Part Number

  • AS7C34098A-10TCN --: Alliance Memory specializes in drop-in replacements for legacy SRAMs; this 64Kx16 asynchronous SRAM matches the HN58V65A density and 100ns speed grade.
  • CY7C1021CV33-10ZXC --: Widely available 64Kx16 low-power SRAM with 100ns access time, suitable as a functional substitute for the HN58V65AFP-10 in most designs.
  • IS61WV6416DBLL-10TLI --: ISSI 64Kx16 high-speed CMOS SRAM with 100ns speed and 3.3V operation, a common second-source option for legacy Renesas SRAM parts.
  • AS6C62256-55PCN --: 32K x 8 low-power SRAM in a 28-pin DIP with 55 ns access time, a common drop-in replacement for 5V SRAMs like the HN58V65 series.
  • CY62256NLL-70PXC --: 32K x 8 low-power CMOS SRAM, 70 ns, 5V tolerant, widely available and functionally compatible with the original 32K x 8 SRAM.
  • IS62WV256-55T --: 32K x 8 low-power SRAM with 55 ns access time in a standard 28-pin package, suitable as a functional substitute for the HN58V65AFP-10.
  • AS7C256A-10TCN --: 32K x 8 asynchronous SRAM with 100 ns access time, functionally equivalent to the 8K x 8 HN58V65A and widely used as a drop-in replacement in legacy designs.
  • IS62WV256-10TLI --: 32K x 8 low-power CMOS SRAM with 100 ns speed grade and industrial temperature range, offering a close functional match for the HN58V65AFP-10.
  • IS61LV256-10T --: 32K x 8 low-power SRAM with 100 ns access time, functionally equivalent to the HN58V65AFP-10 and widely available.
  • CY62256-70PC --: 32K x 8 asynchronous SRAM in a similar package with compatible pinout and timing, suitable as a drop-in replacement.

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