HN58V65AT-10SR — IC Phoenix Distributor

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Partnumber	Manufacturer	Quantity	Availability
HN58V65AT-10SR Manufacturer: HITACHI 64k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature Range version
HN58V65AT-10SR,HN58V65AT10SR	HITACHI	3017	In Stock
Description and Introduction 64k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature Range version The HN58V65AT-10SR is a 64M-bit (8M x 8-bit) CMOS flash memory manufactured by HITACHI. Key specifications include: - Organization: 8M words × 8 bits - Supply Voltage: 3.3V ± 0.3V - Access Time: 100 ns (max) - Operating Temperature Range: -40°C to +85°C - Package: 32-pin SOP (Small Outline Package) - Interface: Parallel (Asynchronous) - Sector Architecture: Uniform 64K-byte sectors - Endurance: 100,000 write/erase cycles (min) per sector - Data Retention: 10 years (min) This device is designed for applications requiring non-volatile storage with fast read/write operations.
Application Scenarios & Design Considerations 64k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature Range version
Alternative Part Number IS61LV256-10T --: 32K x 8 asynchronous SRAM with 100 ns access time, functionally equivalent to the 8K x 8 HN58V65AT-10SR in pinout and timing class; widely available and cost-effective. CY62256LL-70PXC --: 32K x 8 low-power SRAM with 70 ns access time, compatible interface and supply voltage, suitable drop-in replacement where faster timing is acceptable. AS6C62256-55PCN --: 32K x 8 low-power CMOS SRAM, 55 ns access time, pin-compatible with standard 28-pin SRAM sockets and a common long-life replacement for legacy Hitachi SRAM parts.

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