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M13S2561616A-5TG from ESMT

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M13S2561616A-5TG

Manufacturer: ESMT

4M x 16 Bit x 4 Banks Double Data Rate SDRAM

Partnumber Manufacturer Quantity Availability
M13S2561616A-5TG,M13S2561616A5TG ESMT 12111 In Stock

Description and Introduction

4M x 16 Bit x 4 Banks Double Data Rate SDRAM The M13S2561616A-5TG is a memory module manufactured by Elite Semiconductor Memory Technology Inc. (ESMT). Below are the specifications, descriptions, and features based on factual data:  

### **Specifications:**  
- **Part Number:** M13S2561616A-5TG  
- **Manufacturer:** ESMT (Elite Semiconductor Memory Technology Inc.)  
- **Memory Type:** Synchronous DRAM (SDRAM)  
- **Density:** 256Mbit (16M x 16)  
- **Organization:** 16M words × 16 bits  
- **Voltage:** 3.3V ± 0.3V  
- **Speed:** 5ns (CL=3 at 166MHz)  
- **Package:** 54-pin TSOP II  
- **Operating Temperature:** Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)  

### **Descriptions & Features:**  
- **High-Speed Performance:** Supports clock frequencies up to 166MHz.  
- **Low Power Consumption:** Operates at 3.3V with auto and self-refresh modes.  
- **Burst Mode Support:** Programmable burst lengths (1, 2, 4, 8, or full page).  
- **CAS Latency Options:** Supports CAS latencies of 2 and 3.  
- **Auto Precharge:** Configurable for improved efficiency.  
- **Industrial-Grade Reliability:** Available in extended temperature ranges for harsh environments.  

This information is sourced from ESMT's official documentation. For detailed electrical characteristics and timing diagrams, refer to the datasheet.

Application Scenarios & Design Considerations

4M x 16 Bit x 4 Banks Double Data Rate SDRAM
Partnumber Manufacturer Quantity Availability
M13S2561616A-5TG,M13S2561616A5TG M 208 In Stock

Description and Introduction

4M x 16 Bit x 4 Banks Double Data Rate SDRAM The part **M13S2561616A-5TG** is a memory component with the following specifications:  

- **Manufacturer**: Micron Technology  
- **Type**: Synchronous DRAM (SDRAM)  
- **Density**: 256Mb (16M x 16)  
- **Speed**: 5ns (200MHz)  
- **Voltage**: 3.3V  
- **Package**: 54-pin TSOP (Thin Small Outline Package)  
- **Organization**: 16M words × 16 bits  
- **Features**:  
  - Fully synchronous operation  
  - Internal pipelined architecture  
  - Auto refresh and self refresh modes  
  - Programmable burst lengths (1, 2, 4, 8, or full page)  
  - CAS latency options (2 or 3)  

This SDRAM is commonly used in networking, telecommunications, and embedded systems requiring high-speed memory access.

Application Scenarios & Design Considerations

4M x 16 Bit x 4 Banks Double Data Rate SDRAM

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