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M5M29GT161BWG from MITSUBISHI

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M5M29GT161BWG

Manufacturer: MITSUBISHI, MIT

16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
Partnumber Manufacturer Quantity Availability
M5M29GT161BWG MITSUBISHI, MIT 975 In Stock

Description and Introduction

16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY The **M5M29GT161BWG** is a flash memory device manufactured by **MITSUBISHI**. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Specifications:**  
- **Type:** Flash Memory  
- **Density:** 16Mbit (2M x 8-bit / 1M x 16-bit)  
- **Organization:**  
  - **Byte Mode:** 2,097,152 words × 8 bits  
  - **Word Mode:** 1,048,576 words × 16 bits  
- **Supply Voltage:** 3.0V to 3.6V  
- **Access Time:** 70ns (max)  
- **Operating Temperature Range:** -40°C to +85°C  
- **Package:** 48-pin TSOP (Thin Small Outline Package)  
- **Interface:** Asynchronous  
- **Sector Architecture:**  
  - **Uniform Sector Size:** 64Kbytes (32Kwords)  
  - **Total Sectors:** 32 sectors  

### **Descriptions:**  
- The **M5M29GT161BWG** is a **3.3V-only** flash memory device designed for high-performance embedded applications.  
- It supports both **8-bit and 16-bit** data bus configurations.  
- Features **sector erase capability**, allowing individual sectors to be erased without affecting others.  
- Includes a **hardware reset (RESET#) pin** for system-level reset functionality.  

### **Features:**  
- **Low Power Consumption:**  
  - Active Read Current: 20mA (typical)  
  - Standby Current: 20µA (typical)  
- **Fast Erase and Program Times:**  
  - Sector Erase Time: 1s (typical)  
  - Byte/Word Program Time: 20µs (typical)  
- **Reliable Data Retention:**  
  - 100,000 program/erase cycles per sector (minimum)  
  - 20 years data retention (minimum)  
- **Hardware Data Protection:**  
  - **WP# (Write Protect) pin** for sector protection  
  - **Embedded Erase/Program Algorithms**  
- **Compatibility:**  
  - **JEDEC-standard** command set  
  - **CFI (Common Flash Interface)** compliant  

This information is based solely on the manufacturer's datasheet. No additional guidance or suggestions are included.

Application Scenarios & Design Considerations

16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

Alternative Part Number

  • K6R4016V1D-TC10 --: Similar 4Mbit SRAM in the same low-power asynchronous family, widely available and pin-compatible in many designs.
  • IS61LV25616AL-10TLI --: 256K x 16 asynchronous SRAM with comparable speed and voltage, a common drop-in substitute for Mitsubishi SRAM parts.
  • CY7C1041CV33-10ZXI --: 4Mbit 3.3V asynchronous SRAM with similar organization and timing, suitable as a functional replacement.
  • S29GL128P11TFI010 --: 128 Mbit parallel NOR flash in TSOP-56, similar density and interface to the original 16 Mbit part; widely available and well documented.
  • MX29LV160DBTI-70G --: 16 Mbit parallel NOR flash with compatible byte/word interface and TSOP-48/56 package options, a common drop-in class replacement.
  • AM29LV160DB-90EI --: 16 Mbit 3V parallel NOR flash with standard command set and similar pinout, suitable as a functional substitute.

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