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M5M5V216ATP-70HI from RENESAS

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M5M5V216ATP-70HI

Manufacturer: RENESAS, MIT

2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM

Partnumber Manufacturer Quantity Availability
M5M5V216ATP-70HI,M5M5V216ATP70HI RENESAS, MIT 2539 In Stock

Description and Introduction

2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM The **M5M5V216ATP-70HI** is a memory module manufactured by **MIT (Memory & Interface Technology)**. Below are the factual specifications, descriptions, and features from the available knowledge base:  

### **Manufacturer:**  
- **MIT (Memory & Interface Technology)**  

### **Specifications:**  
- **Type:** Synchronous DRAM (SDRAM)  
- **Density:** 16Mbit  
- **Organization:** 2M x 8 (2 Meg words x 8 bits)  
- **Voltage:** 3.3V  
- **Speed:** 70ns (Access Time)  
- **Package:** TSOP (Thin Small Outline Package)  
- **Operating Temperature:** Industrial (-40°C to +85°C)  

### **Features:**  
- **High-Speed Operation:** Supports fast access times for performance-critical applications.  
- **Low Power Consumption:** Designed for efficiency in industrial and embedded systems.  
- **Industrial-Grade:** Reliable operation in harsh environments with extended temperature ranges.  
- **Synchronous Interface:** Compatible with standard SDRAM controllers.  

### **Applications:**  
- Industrial automation  
- Embedded systems  
- Networking equipment  
- Telecommunications  

This information is based solely on the provided knowledge base. For further details, consult the official MIT datasheet or product documentation.

Application Scenarios & Design Considerations

2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM

Alternative Part Number

  • IS61WV25616EDBLL-10TLI --: 256K x 16 asynchronous SRAM with 10 ns access time, functionally similar to the 70 ns 256K x 16 SRAM and widely available as a drop-in style alternative.
  • CY7C1041G-10ZSXI --: 256K x 16 high-speed asynchronous SRAM with comparable organization and pinout, suitable replacement when faster access time is acceptable.
  • AS6C4008-55TIN --: 512K x 8 low-power CMOS SRAM from a different series; can serve as an alternative memory solution where board layout allows, with similar voltage and interface characteristics.
  • IS61LV25616AL-10TLI --: 256K x 16 asynchronous SRAM with similar 70 ns class speed and 3.3 V interface, widely available and pin-compatible in function.
  • CY7C1041CV33-10ZXI --: 256K x 16 low-power SRAM at 3.3 V with comparable access time, a common drop-in functional replacement for Mitsubishi SRAMs.
  • AS6C62256-55SIN --: 32K x 8 low-power CMOS SRAM offering similar asynchronous operation and voltage range, suitable when a smaller density alternative is acceptable.

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