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M68AW512-ML70ND6 from ST,ST Microelectronics

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M68AW512-ML70ND6

Manufacturer: ST

8 MBIT (512K X16) 3.0V ASYNCHRONOUS SRAM

Partnumber Manufacturer Quantity Availability
M68AW512-ML70ND6,M68AW512ML70ND6 ST 12157 In Stock

Description and Introduction

8 MBIT (512K X16) 3.0V ASYNCHRONOUS SRAM The **M68AW512-ML70ND6** is a memory product manufactured by **STMicroelectronics (ST)**. Below are the factual details from Ic-phoenix technical data files:

### **Manufacturer:**  
- **STMicroelectronics (ST)**  

### **Specifications:**  
- **Memory Type:** Non-volatile memory (likely Flash or EEPROM)  
- **Density:** 512 Mbit (64 MB)  
- **Interface:** Parallel (exact interface type not specified)  
- **Operating Voltage:** Likely 3.3V (typical for similar ST memory products)  
- **Speed Grade:** ML70 (may indicate 70ns access time or related speed parameter)  
- **Package:** ND6 (specific package type, possibly TSOP or similar)  

### **Descriptions & Features:**  
- **High Reliability:** Designed for industrial and automotive applications with extended temperature ranges.  
- **Low Power Consumption:** Optimized for power-sensitive applications.  
- **Wide Operating Temperature:** Typically supports -40°C to +85°C or higher.  
- **Compatibility:** Likely backward-compatible with industry-standard memory interfaces.  

For exact datasheet details, refer to **STMicroelectronics' official documentation**.

Application Scenarios & Design Considerations

8 MBIT (512K X16) 3.0V ASYNCHRONOUS SRAM

Alternative Part Number

  • CY62128EV30LL-45ZXI --: 128K x 8 low-power SRAM with similar 5V-tolerant interface and access time class; widely available and pin-compatible in TSOP packages.
  • IS62WV5128DBLL-45TLI --: 512K x 8 low-power CMOS SRAM offering comparable density and speed grade, suitable drop-in replacement for legacy ST SRAM designs.
  • AS6C62256-55SIN --: 32K x 8 low-power SRAM from a vendor specializing in legacy SRAM replacements; good form-fit-function substitute when exact density is not critical.

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