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MRF18090BS from freescale

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MRF18090BS

Manufacturer: freescale, MOT

RF POWER FIELD EFFECT TRANSISTORS
Partnumber Manufacturer Quantity Availability
MRF18090BS freescale, MOT 112 In Stock

Description and Introduction

RF POWER FIELD EFFECT TRANSISTORS **Introduction to the MRF18090BS RF Power Transistor**  

The MRF18090BS is a high-performance RF power transistor designed for demanding applications in the radio frequency (RF) and microwave spectrum. Engineered for efficiency and reliability, this component is commonly used in industrial, commercial, and communication systems where robust signal amplification is required.  

Operating within the L-band frequency range, the MRF18090BS delivers high power output with excellent linearity, making it suitable for pulsed and continuous-wave (CW) applications. Its advanced semiconductor technology ensures low thermal resistance and high gain, contributing to stable performance even under rigorous operating conditions.  

Key features of the MRF18090BS include high power density, ruggedness against load mismatches, and consistent performance over a wide bandwidth. These attributes make it an ideal choice for radar systems, avionics, and RF energy applications where precision and durability are critical.  

The transistor is housed in a reliable package designed for efficient heat dissipation, ensuring long-term operational stability. Engineers and designers favor the MRF18090BS for its ability to meet stringent performance requirements while maintaining a compact form factor.  

In summary, the MRF18090BS stands out as a versatile and dependable RF power transistor, offering superior performance for high-frequency amplification needs in advanced electronic systems.

Application Scenarios & Design Considerations

RF POWER FIELD EFFECT TRANSISTORS

Alternative Part Number

  • BLF188XR --: High-power LDMOS RF transistor in the same 900 MHz class with comparable output power, suitable as a drop-in replacement for RF amplifier designs.
  • MRFE6VP8600H --: NXP LDMOS RF power transistor with similar frequency range and power capability, widely used as a substitute for Freescale MRF series parts.
  • PTFA091201E --: LDMOS RF power transistor covering the 900 MHz band with comparable gain and output power, offering a viable alternative from a different vendor.
  • BLF182XR --: LDMOS RF power transistor in the same 90 W class for 1.8 GHz base station applications, offering comparable gain and output power as a drop-in style replacement.
  • PTF180901 --: LDMOS RF power MOSFET rated around 90 W at 1.8 GHz, similar package and bias requirements, suitable for base station amplifier designs.
  • MRF18090A --: Same power class 1.8 GHz LDMOS device from the successor vendor of Motorola RF products, with closely matching electrical characteristics and application notes.

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