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MT4C1M16E5 from MICRON

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MT4C1M16E5

Manufacturer: MICRON, MT

EDO DRAM

Partnumber Manufacturer Quantity Availability
MT4C1M16E5 MICRON, MT 90 In Stock

Description and Introduction

EDO DRAM **Introduction to the MT4C1M16E5 Electronic Component**  

The MT4C1M16E5 is a high-performance electronic component widely used in memory applications, particularly in systems requiring reliable and efficient data storage. This device is a 16Mb (1M x 16) CMOS static random-access memory (SRAM) designed to deliver fast access times and low power consumption, making it suitable for embedded systems, networking equipment, and industrial applications.  

Featuring a 5V operating voltage, the MT4C1M16E5 ensures stable performance in demanding environments. Its asynchronous operation allows for flexible interfacing with microcontrollers and processors, while its low standby current enhances energy efficiency. The component is built with advanced CMOS technology, ensuring high-speed data access and robust noise immunity.  

The MT4C1M16E5 is available in industry-standard packages, facilitating easy integration into existing designs. Its non-volatile storage capability ensures data retention even during power interruptions, making it a dependable choice for critical applications. With a wide operating temperature range, this SRAM is well-suited for both commercial and industrial use.  

Engineers and designers favor the MT4C1M16E5 for its balance of speed, power efficiency, and reliability. Whether used in telecommunications, automotive systems, or industrial automation, this component provides a solid foundation for memory-intensive applications. Its compatibility with various system architectures further enhances its versatility, making it a preferred choice for modern electronic designs.  

In summary, the MT4C1M16E5 is a high-quality SRAM solution that combines performance, durability, and efficiency, meeting the demands of today’s advanced electronic systems.

Application Scenarios & Design Considerations

EDO DRAM

Alternative Part Number

  • AS4C1M16E5-50TCN --: Pin-compatible 1M x 16 EDO DRAM in the same 50-pin TSOP package, widely used as a drop-in replacement for Micron E5-series parts.
  • IS41C16256-50T --: 1M x 16 asynchronous DRAM with comparable speed and pinout, a common second-source option for legacy Micron DRAM designs.
  • CY7C1021DV33-10ZSXI --: 1M x 16 asynchronous SRAM that can substitute in many legacy 1M x 16 memory sockets when timing and interface allow, from a different product family.
  • IS41C16256 --: 1M x 16-bit DRAM with similar organization and 5V interface, widely used as a drop-in alternative for MT4C1M16E5 in legacy designs.
  • AS4C1M16E5 --: Alliance Memory specializes in legacy DRAM replacements and offers a 1M x 16 EDO DRAM that matches the MT4C1M16E5 function and pinout.
  • HY51V16256 --: 1M x 16-bit DRAM in the same class with compatible timing and voltage, suitable as a second-source substitute for the Micron part.

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