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MT4LC1M16E5DJ-6 from MIC

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MT4LC1M16E5DJ-6

Manufacturer: MIC, MICRON

EDO DRAM

Partnumber Manufacturer Quantity Availability
MT4LC1M16E5DJ-6,MT4LC1M16E5DJ6 MIC, MICRON 773 In Stock

Description and Introduction

EDO DRAM **Introduction to the MT4LC1M16E5DJ-6 Memory Module**  

The MT4LC1M16E5DJ-6 is a high-performance synchronous dynamic random-access memory (SDRAM) module designed for applications requiring reliable and efficient data storage. This component is part of a series of memory solutions optimized for embedded systems, networking equipment, and industrial computing, where stability and speed are critical.  

With a capacity of 16 megabits (2 megabytes), the MT4LC1M16E5DJ-6 operates at a clock speed of 166 MHz, ensuring swift data access and processing. It features a 16-bit wide data bus, making it suitable for systems that demand moderate bandwidth while maintaining power efficiency. The module adheres to industry-standard SDRAM protocols, ensuring compatibility with a wide range of microprocessors and controllers.  

One of the key advantages of this memory module is its low-power operation, making it ideal for energy-sensitive applications. Its robust design supports extended temperature ranges, enhancing reliability in harsh environments. Additionally, the MT4LC1M16E5DJ-6 incorporates advanced error correction and refresh mechanisms to maintain data integrity over prolonged use.  

Engineers and designers often select this component for its balance of performance, power efficiency, and durability. Whether used in telecommunications infrastructure, medical devices, or industrial automation, the MT4LC1M16E5DJ-6 provides a dependable memory solution for demanding applications.  

In summary, the MT4LC1M16E5DJ-6 is a versatile and reliable SDRAM module that meets the needs of modern embedded systems, offering a combination of speed, efficiency, and resilience.

Application Scenarios & Design Considerations

EDO DRAM

Alternative Part Number

  • IS41C16256-60J --: 1M x 16 asynchronous DRAM in a 42-pin SOJ package with 60 ns access time, functionally equivalent to the original 1M x 16 DRAM.
  • AS4C1M16E5-60JC --: Direct 1M x 16 EDO DRAM replacement in 42-pin SOJ, 60 ns speed grade, commonly used as a drop-in substitute for Micron legacy DRAMs.
  • HM514260CJ-60 --: 1M x 16 EDO DRAM with 60 ns access time in a 42-pin SOJ package, pin-compatible with the original device.
  • IS41LV16256-60T --: 1M x 16 asynchronous DRAM in the same 42-pin SOJ package with comparable 60 ns speed, widely available and pin-compatible replacement.
  • AS4C1M16S-6TCN --: Direct 1M x 16 EDO DRAM alternative in 50-pin TSOP with 60 ns access time, commonly used as a drop-in for Micron legacy DRAMs.
  • HY51V16256C-60 --: 1M x 16 fast-page/EDO DRAM with 60 ns speed grade, functionally equivalent and available in similar SOJ/TSOP packages.

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