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MT4LC1M16E5TG-5 from MICRON

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MT4LC1M16E5TG-5

Manufacturer: MICRON, MIC

EDO DRAM

Partnumber Manufacturer Quantity Availability
MT4LC1M16E5TG-5,MT4LC1M16E5TG5 MICRON, MIC 973 In Stock

Description and Introduction

EDO DRAM # Introduction to the MT4LC1M16E5TG-5 Memory Component  

The **MT4LC1M16E5TG-5** is a high-performance **16Mbit (1M x 16) CMOS synchronous DRAM (SDRAM)** designed for applications requiring fast data access and efficient memory management. This component operates at a **5V supply voltage**, making it suitable for a range of industrial and embedded systems where reliability and speed are critical.  

Featuring a **synchronous interface**, the MT4LC1M16E5TG-5 allows for precise timing control, enabling seamless integration with high-speed processors and microcontrollers. Its **16-bit wide data bus** supports efficient data transfer, while internal pipelining enhances performance in demanding computing environments.  

Key specifications include a **CAS latency of 3 cycles**, ensuring rapid response times, and an **auto-refresh mechanism** that maintains data integrity. The device is organized in **four internal banks**, allowing concurrent operations for improved throughput. Additionally, it supports **burst read and write operations**, optimizing sequential data access.  

The MT4LC1M16E5TG-5 is commonly used in applications such as **networking equipment, industrial automation, and telecommunications systems**, where stable and high-speed memory is essential. Its **low-power standby mode** further enhances energy efficiency in battery-operated or power-sensitive designs.  

With a **compact TSOP package**, this SDRAM is designed for space-constrained PCB layouts while maintaining robust signal integrity. Engineers and designers can leverage its **industry-standard pinout** for easy integration into existing memory architectures.  

Overall, the **MT4LC1M16E5TG-5** offers a balanced combination of speed, power efficiency, and reliability, making it a practical choice for modern electronic systems.

Application Scenarios & Design Considerations

EDO DRAM

Alternative Part Number

  • IS41LV16256-50T --: 1M x 16-bit asynchronous DRAM in the same 50 ns speed grade and TSOP package, pin-compatible with the Micron EDO part.
  • AS4C1M16E5-50TC --: Direct drop-in replacement for 1M x 16 EDO DRAM at 50 ns, widely used as a second source for legacy Micron DRAMs.
  • HY51V16256C-50 --: 1M x 16 EDO DRAM with 50 ns access time in a comparable TSOP package, suitable as a functional substitute.

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