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MT4LC1M16E5TG-5S from MIC

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MT4LC1M16E5TG-5S

Manufacturer: MIC, MICRON

EDO DRAM
Partnumber Manufacturer Quantity Availability
MT4LC1M16E5TG-5S,MT4LC1M16E5TG5S MIC, MICRON 1617 In Stock

Description and Introduction

EDO DRAM **Introduction to the MT4LC1M16E5TG-5S Memory Component**  

The MT4LC1M16E5TG-5S is a high-performance synchronous dynamic random-access memory (SDRAM) module designed for applications requiring fast data access and efficient power consumption. Manufactured with advanced semiconductor technology, this component offers a reliable solution for embedded systems, networking equipment, and industrial computing.  

Featuring a 1M x 16-bit organization, the MT4LC1M16E5TG-5S operates at a speed grade of 5ns, ensuring rapid data transfer rates suitable for real-time processing. Its low-voltage operation enhances energy efficiency, making it ideal for power-sensitive designs. The module supports standard SDRAM functions, including burst read/write operations and auto-refresh cycles, ensuring seamless integration into various system architectures.  

Built with robust materials, this SDRAM component delivers stable performance across a wide temperature range, meeting industrial-grade reliability standards. Its compact form factor and compatibility with industry-standard interfaces simplify PCB layout and system upgrades.  

Engineers and designers will appreciate the MT4LC1M16E5TG-5S for its balance of speed, power efficiency, and durability, making it a versatile choice for modern electronic applications. Whether used in telecommunications, automation, or consumer electronics, this memory module provides a dependable foundation for high-speed data processing.  

For detailed specifications and application guidelines, consult the official datasheet to ensure optimal implementation in your design.

Application Scenarios & Design Considerations

EDO DRAM

Alternative Part Number

  • IS41C16256-50T --: 1M x 16 asynchronous DRAM with 50 ns speed grade, functionally equivalent to the 1M16 EDO device and widely available from ISSI.
  • AS4C1M16E5-50TC --: Direct 1M x 16 EDO DRAM replacement in a 50-pin TSOP package with 50 ns access time, commonly used to replace Micron legacy DRAMs.
  • HY51V16256C-50 --: 1M x 16 EDO DRAM with 50 ns speed grade and compatible pinout, a viable second-source option for the Micron part.
  • IS41LV16256-50T --: 1M x 16 EDO DRAM in the same 50-pin TSOP package with 50 ns speed grade, a direct functional replacement for the Micron part.
  • HY51V16256CT-50 --: 1M x 16 EDO DRAM in 50-pin TSOP with 50 ns speed, a widely available alternative from a major DRAM vendor.

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