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MT4LC1M16E5TG-6 from MIC

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MT4LC1M16E5TG-6

Manufacturer: MIC, MT, MICRON

EDO DRAM

Partnumber Manufacturer Quantity Availability
MT4LC1M16E5TG-6,MT4LC1M16E5TG6 MIC, MT, MICRON 13058 In Stock

Description and Introduction

EDO DRAM **Introduction to the MT4LC1M16E5TG-6 Electronic Component**  

The **MT4LC1M16E5TG-6** is a high-performance **16Mb (1M x 16) CMOS synchronous DRAM (SDRAM)** designed for applications requiring fast data access and efficient memory management. This component operates at a **166MHz clock frequency**, making it suitable for embedded systems, networking equipment, and industrial applications where reliable, low-latency memory is essential.  

Featuring a **3.3V power supply**, the MT4LC1M16E5TG-6 supports **burst read and write operations**, enabling rapid data transfer with minimal processing overhead. Its **synchronous interface** ensures precise timing alignment with the system clock, improving overall performance in high-speed environments. The device also includes **auto-refresh and self-refresh modes**, reducing power consumption in standby or low-activity states.  

With a **54-pin TSOP-II package**, the MT4LC1M16E5TG-6 offers a compact footprint, making it ideal for space-constrained designs. Its robust architecture ensures compatibility with a wide range of microprocessors and controllers, providing flexibility in system integration.  

Engineers and designers will appreciate its **low-power operation**, **high-speed data throughput**, and **industry-standard compliance**, making it a dependable choice for memory-intensive applications. Whether used in telecommunications, automation, or consumer electronics, this SDRAM delivers consistent performance under demanding conditions.  

For detailed specifications, refer to the manufacturer’s datasheet to ensure proper implementation within your design.

Application Scenarios & Design Considerations

EDO DRAM

Alternative Part Number

  • IS41LV16256-60T --: 1M x 16 EDO DRAM in the same 50-pin TSOP package with comparable 60 ns speed, widely available and pin-compatible replacement.
  • AS4C1M16E5-60TC --: Direct 1M x 16 EDO DRAM equivalent with 60 ns access time, designed as a drop-in replacement for legacy Micron EDO parts.
  • HY51V16256CT-60 --: 1M x 16 EDO DRAM with 60 ns speed in TSOP package, functionally equivalent to the original Micron device.
  • AS4C1M16S-6TCN --: 1M x 16 CMOS DRAM in TSOP package with 60 ns access time, pin-compatible with the MT4LC1M16E5 series.
  • HY51V16256C-60 --: 1M x 16 fast page mode DRAM rated at 60 ns, functionally equivalent to the Micron 1M16 E5 device.

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