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MT4LC8M8E1TG-5 from

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MT4LC8M8E1TG-5

Manufacturer: MICRON

DRAM

Partnumber Manufacturer Quantity Availability
MT4LC8M8E1TG-5,MT4LC8M8E1TG5 MICRON 53895 In Stock

Description and Introduction

DRAM **Introduction to the MT4LC8M8E1TG-5 Electronic Component**  

The MT4LC8M8E1TG-5 is a high-performance electronic component designed for memory applications, offering reliable data storage and retrieval in compact, power-efficient systems. This device is part of the dynamic random-access memory (DRAM) family, engineered to deliver fast access speeds and stable performance in demanding environments.  

Featuring an 8M x 8-bit organization, the MT4LC8M8E1TG-5 provides a total capacity of 64 megabits (8 megabytes), making it suitable for embedded systems, networking equipment, and industrial applications where low-latency memory is essential. Its 5V operating voltage ensures compatibility with legacy systems while maintaining energy efficiency.  

With a -5 speed grade, this component supports rapid data transfer rates, catering to real-time processing needs. Its robust design includes industry-standard packaging, ensuring seamless integration into existing circuit layouts. Additionally, the MT4LC8M8E1TG-5 adheres to stringent quality and reliability standards, making it a dependable choice for mission-critical applications.  

Engineers and designers will appreciate its balance of performance, power efficiency, and durability, making it a versatile solution for a wide range of memory-intensive tasks. Whether used in telecommunications, automation, or consumer electronics, this component delivers consistent performance under varying operational conditions.  

For detailed specifications, consult the manufacturer’s datasheet to ensure proper implementation within your design framework.

Application Scenarios & Design Considerations

DRAM

Alternative Part Number

  • IS42S16400J-7TL --: 64Mb SDR SDRAM organized 4M x 16, functionally similar to the 8M x 8 Micron part and widely available as a drop-in memory alternative.
  • AS4C8M8SA-6TIN --: 8M x 8 SDR SDRAM in TSOP package, matches the original density and organization and is a common second-source replacement.
  • W9864G6JH-6 --: 64Mb SDR SDRAM with comparable organization and speed grade, suitable as an alternative memory device for similar designs.
  • AS4C8M8SA-7TCN --: 8M x 8 SDR SDRAM in TSOP with 7ns speed grade, specifically marketed as a replacement for legacy Micron SDRAM devices.

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