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MT4LC8M8P4DJ-5 from MICRON

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MT4LC8M8P4DJ-5

Manufacturer: MICRON

DRAM

Partnumber Manufacturer Quantity Availability
MT4LC8M8P4DJ-5,MT4LC8M8P4DJ5 MICRON 2000 In Stock

Description and Introduction

DRAM **Introduction to the MT4LC8M8P4DJ-5 Electronic Component**  

The **MT4LC8M8P4DJ-5** is a high-performance **8M x 8-bit CMOS synchronous dynamic random-access memory (SDRAM)** module designed for applications requiring fast data access and efficient power management. This component operates at a **5V supply voltage**, making it suitable for industrial, automotive, and embedded systems where reliability and speed are critical.  

Featuring a **synchronous interface**, the MT4LC8M8P4DJ-5 supports high-speed data transfers with precise clock synchronization, reducing latency and improving system performance. Its **8M x 8-bit organization** provides a balanced memory structure, enabling seamless integration into various digital circuits.  

Key specifications include **low power consumption**, **auto-refresh and self-refresh modes**, and **burst read/write capabilities**, which enhance efficiency in power-sensitive applications. The component also supports **programmable burst lengths** and **CAS latency**, allowing for flexible configuration based on system requirements.  

With a **compact form factor**, the MT4LC8M8P4DJ-5 is ideal for space-constrained designs while maintaining robust signal integrity. Its **industrial-grade temperature tolerance** ensures stable operation in harsh environments.  

Engineers and designers often utilize this SDRAM in **networking equipment, automotive electronics, and industrial control systems** where high-speed data processing and reliability are essential. Its compatibility with standard SDRAM controllers simplifies implementation, making it a practical choice for modern electronic designs.  

In summary, the **MT4LC8M8P4DJ-5** offers a blend of **speed, efficiency, and durability**, making it a dependable solution for demanding memory applications.

Application Scenarios & Design Considerations

DRAM

Alternative Part Number

  • IS41LV8200-50T --: 8Mbit EDO DRAM organized 1M x 8, similar 50ns speed grade and 3.3V operation, drop-in functional replacement for the Micron 8M x 8 DRAM.
  • AS4C1M8S8-50TCN --: 1M x 8 fast asynchronous DRAM with 50ns access time, pin-compatible with the MT4LC8M8P4DJ-5 and widely used as a Micron legacy DRAM replacement.
  • W9864G6GH-6 --: 8Mbit SDRAM organized 1M x 8 with comparable density and speed, suitable as an alternative when minor timing differences are acceptable.

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