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MTD4N20E from ON,ON Semiconductor

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MTD4N20E

Manufacturer: ON, MOTOROLA, MOT

OBSOLETE
Partnumber Manufacturer Quantity Availability
MTD4N20E ON, MOTOROLA, MOT 479 In Stock

Description and Introduction

OBSOLETE # Introduction to the MTD4N20E Electronic Component  

The **MTD4N20E** is a high-performance N-channel MOSFET designed for efficient power switching applications. With a drain-source voltage (VDS) rating of **200V** and a continuous drain current (ID) of **4A**, it is well-suited for use in power supplies, motor control circuits, and DC-DC converters.  

This MOSFET features a low on-resistance (RDS(on)) of **1.5Ω (max)**, which helps minimize power dissipation and improve energy efficiency. Its fast switching characteristics make it ideal for high-frequency applications, while its rugged design ensures reliable operation under demanding conditions.  

The **MTD4N20E** is housed in a **TO-252 (DPAK)** package, providing a compact footprint with good thermal performance. Its robust construction and high voltage tolerance make it a dependable choice for industrial, automotive, and consumer electronics applications.  

Engineers and designers often select the MTD4N20E for its balance of performance, efficiency, and cost-effectiveness. Whether used in switching regulators or load drivers, this MOSFET delivers consistent performance while maintaining thermal stability.  

For detailed specifications, always refer to the manufacturer’s datasheet to ensure proper integration into your circuit design.

Application Scenarios & Design Considerations

OBSOLETE

Alternative Part Number

  • IRF540N --: Widely available N-channel MOSFET with 100V/33A rating, higher voltage and current margin than the 200V/4A MTD4N20E, suitable for similar switching applications.
  • STP4N20 --: Direct 200V/4A N-channel MOSFET in TO-220, closely matching voltage and current ratings for drop-in replacement in most circuits.
  • FQP4N20 --: 200V/4A N-channel MOSFET from the same manufacturer family, offering comparable RDS(on) and switching characteristics for equivalent designs.
  • IRF520N --: N-channel MOSFET with comparable 100V/9.2A ratings and logic-level gate, widely available and pin-compatible in TO-220.
  • 2N7000 --: Small-signal N-channel MOSFET often used as a lower-power substitute where the original is used in low-current switching.
  • IRFZ24N --: N-channel MOSFET with comparable voltage and current ratings, widely available and often used as a substitute in switching applications.
  • BSS138 --: Logic-level N-channel MOSFET commonly used for level shifting and low-current switching, a practical alternative for low-power circuits.

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