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MTP27N10E from ON,ON Semiconductor

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MTP27N10E

Manufacturer: ON, MOT, MOTO

TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHM

Partnumber Manufacturer Quantity Availability
MTP27N10E ON, MOT, MOTO 52 In Stock

Description and Introduction

TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHM # Introduction to the MTP27N10E MOSFET  

The MTP27N10E is an N-channel power MOSFET designed for high-efficiency switching applications. With a drain-source voltage (VDS) rating of 100V and a continuous drain current (ID) of 27A, this component is well-suited for power management in various electronic systems, including motor control, power supplies, and DC-DC converters.  

Featuring a low on-resistance (RDS(on)) of 0.055Ω (typical), the MTP27N10E minimizes conduction losses, improving overall system efficiency. Its fast switching characteristics make it ideal for high-frequency applications where reduced switching losses are critical. The device is housed in a TO-220 package, providing reliable thermal performance and ease of mounting on heatsinks for effective heat dissipation.  

The MOSFET includes an integrated body diode, enhancing its robustness in inductive load applications by providing a path for reverse current flow. Additionally, its gate charge (Qg) and threshold voltage (VGS(th)) specifications ensure compatibility with standard gate drive circuits.  

Engineers often select the MTP27N10E for its balance of performance, durability, and cost-effectiveness in medium-to-high-power applications. Proper consideration of operating conditions, such as voltage, current, and thermal management, is essential to maximize its reliability and longevity in circuit designs.

Application Scenarios & Design Considerations

TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHM

Alternative Part Number

  • IRF540N --: Widely available 100V N-channel MOSFET with comparable current rating and low RDS(on), a common drop-in replacement for 100V power switching applications.
  • STP16NF06 --: 60V N-channel MOSFET in TO-220 with similar package and current capability; suitable when the 100V rating is not strictly required.
  • FQP30N06L --: Logic-level 60V N-channel MOSFET in TO-220 with high current rating, offering a robust alternative for similar switching circuits.
  • STP16NF10 --: 100V N-channel MOSFET in TO-220 with similar voltage and current ratings, suitable drop-in replacement for switching applications.
  • FQP13N10 --: 100V N-channel MOSFET in TO-220 with comparable on-resistance and current capability, good availability and cost.
  • FQP30N10 --: 100V N-channel MOSFET with low RDS(on) and adequate current rating, a practical alternative in the same package class.

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