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MTP60N06 from ON,ON Semiconductor

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MTP60N06

Manufacturer: ON, IR

TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM

Partnumber Manufacturer Quantity Availability
MTP60N06 ON, IR 394 In Stock

Description and Introduction

TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM The **MTP60N06** is a robust N-channel power MOSFET designed for high-efficiency switching applications. With a drain-source voltage (VDS) rating of 60V and a continuous drain current (ID) of 60A, this component is well-suited for power management in automotive, industrial, and consumer electronics.  

Featuring a low on-resistance (RDS(on)) of 0.023Ω, the MTP60N06 minimizes power losses, enhancing thermal performance and energy efficiency. Its fast switching capabilities make it ideal for DC-DC converters, motor drives, and load-switching circuits.  

Encased in a TO-220 package, the MOSFET ensures reliable heat dissipation, supporting high-power applications. The device also includes an integrated diode for protection against inductive load transients, improving system durability.  

Engineers favor the MTP60N06 for its balance of performance, ruggedness, and cost-effectiveness. Whether used in battery management systems, power supplies, or motor control, this MOSFET delivers consistent operation under demanding conditions.  

For optimal performance, proper heat sinking and gate drive considerations are recommended to maximize efficiency and longevity. Its specifications make it a versatile choice for designers seeking a dependable power-switching solution.

Application Scenarios & Design Considerations

TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM

Alternative Part Number

  • IRFZ44N --: Widely available 55V N-channel MOSFET with comparable RDS(on) and current rating, common drop-in for 60V logic-level switching applications.
  • STP60NF06 --: 60V N-channel power MOSFET with similar voltage and current ratings, suitable replacement in switching and power supply circuits.
  • FQP60N06 --: 60V N-channel MOSFET in TO-220 with comparable on-resistance and current capability, direct functional equivalent.

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