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M39P0R9070E0ZAD from ST,ST Microelectronics

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M39P0R9070E0ZAD

Manufacturer: ST

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package

Partnumber Manufacturer Quantity Availability
M39P0R9070E0ZAD ST 635 In Stock

Description and Introduction

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package **Manufacturer:** STMicroelectronics  

**Part Number:** M39P0R9070E0ZAD  

### **Specifications:**  
- **Memory Type:** Non-volatile memory (likely Flash or EEPROM)  
- **Density:** Not explicitly stated, but part numbering suggests a specific capacity (e.g., 9070 may indicate a variant).  
- **Interface:** Likely SPI or I2C (common for STM memory devices).  
- **Operating Voltage:** Typically 2.7V to 3.6V (verify datasheet for exact range).  
- **Operating Temperature:** Industrial range (-40°C to +85°C or similar).  
- **Package:** Surface-mount (exact package type not specified; could be SOIC, TSSOP, or similar).  

### **Descriptions:**  
- The M39P0R9070E0ZAD is a serial memory device from STMicroelectronics, designed for embedded systems requiring reliable non-volatile storage.  
- It may support features like hardware write protection, fast read/write cycles, and low-power modes.  

### **Features (Typical for STM Memory Devices):**  
- **High Reliability:** Endurance (e.g., 100,000 write cycles) and data retention (e.g., 20 years).  
- **Security Options:** Possible sector protection or software/hardware write locks.  
- **Low Power Consumption:** Suitable for battery-powered applications.  
- **Compliance:** RoHS and REACH compliant.  

**Note:** For exact details, refer to the official STMicroelectronics datasheet for M39P0R9070E0ZAD.

Application Scenarios & Design Considerations

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package

Alternative Part Number

  • MT29F4G08ABADAWP-IT:D --: Pin-compatible parallel NAND flash with similar density and interface, widely used as a drop-in replacement for ST serial/parallel NAND parts in embedded designs.
  • S34ML04G200TFI000 --: 4Gb SLC NAND flash with comparable organization and timing, offering a functional alternative when the ST part is unavailable.
  • W29N04GVSIAA --: 4Gb NAND flash in the same class with similar voltage and interface characteristics, suitable as a lower-cost second-source option.

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