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MB8264A-10 from FUJI

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MB8264A-10

Manufacturer: FUJI, FUJ

MOS 65536-BIT DYNAMIC RANDOM ACCESS MEMORY

Partnumber Manufacturer Quantity Availability
MB8264A-10,MB8264A10 FUJI, FUJ 1054 In Stock

Description and Introduction

MOS 65536-BIT DYNAMIC RANDOM ACCESS MEMORY The part **MB8264A-10** is a **64K (8K x 8) Static RAM (SRAM)** manufactured by **Fujitsu**.  

### **Specifications:**  
- **Organization:** 8K x 8 (65,536 bits)  
- **Access Time:** 100 ns  
- **Operating Voltage:** 5V ±10%  
- **Power Consumption:**  
  - Active: 330 mW (typical)  
  - Standby: 33 mW (typical)  
- **Operating Temperature Range:** 0°C to +70°C  
- **Package Type:** 28-pin DIP (Dual In-line Package)  
- **Technology:** CMOS  

### **Descriptions & Features:**  
- **High-Speed Operation:** Suitable for systems requiring fast memory access.  
- **Low Power Consumption:** Features both active and standby modes for power efficiency.  
- **Fully Static Design:** No clock or refresh required.  
- **TTL-Compatible Inputs/Outputs:** Ensures compatibility with standard logic levels.  
- **Single 5V Power Supply:** Simplifies system integration.  
- **Three-State Outputs:** Allows bus-oriented applications.  
- **Wide Temperature Range:** Suitable for commercial-grade applications.  

This SRAM was commonly used in early computing systems, embedded applications, and industrial electronics where fast, low-power memory was required.

Application Scenarios & Design Considerations

MOS 65536-BIT DYNAMIC RANDOM ACCESS MEMORY# Technical Documentation: MB8264A10 High-Speed CMOS Logic IC

 Manufacturer : FUJI
 Component Type : High-Speed CMOS 8-Bit Bidirectional Transceiver
 Document Version : 1.0
 Date : October 26, 2023

---

## 1. Application Scenarios

### 1.1 Typical Use Cases
The MB8264A10 is a high-performance, 8-bit bidirectional transceiver designed for asynchronous data transfer between two bidirectional buses. Its primary function is to provide non-inverting, three-state buffering for data flow in either direction, controlled by the state of the Direction Control (DIR) and Output Enable (OE) inputs.

 Key Use Cases Include: 
*    Bus Isolation and Buffering:  Used to isolate and buffer data buses in microprocessor-based systems, preventing bus contention and improving signal integrity. It is commonly placed between a CPU's local bus and a shared system bus or peripheral bus.
*    Bidirectional Port Expansion:  Enables bidirectional communication for I/O port expansion ICs or peripheral devices that lack sufficient drive capability or need electrical isolation.
*    Level Translation (within the CMOS family):  While not a voltage level translator in the traditional sense, it can reliably interface between different sections of a system operating at the same VCC but requiring buffered signal paths.
*    Hot-Swap or Live Insertion Buffering:  The three-state outputs and robust CMOS design make it suitable for applications where cards or modules may be inserted into a live backplane, provided proper power sequencing controls are implemented.

### 1.2 Industry Applications
The MB8264A10 finds application across several industries due to its fundamental role in digital data path management.

*    Industrial Automation:  Used in Programmable Logic Controller (PLC) I/O modules, sensor interface boards, and motor drive communication channels to manage data flow between the central processor and field devices.
*    Telecommunications:  Employed in legacy switching equipment, router line cards, and network interface modules for data bus buffering and isolation.
*    Test & Measurement Equipment:  Integrated into data acquisition systems, logic analyzers, and signal generators to buffer and route digital control and data signals between internal subsystems.
*    Consumer Electronics:  Found in older-generation set-top boxes, gaming consoles, and printers for managing internal data bus architectures.
*    Automotive Electronics (Non-Critical Systems):  May be used in infotainment systems or body control modules for general-purpose data routing, though not typically in safety-critical powertrain applications.

### 1.3 Practical Advantages and Limitations

 Advantages: 
*    High-Speed Operation:  Utilizes advanced CMOS technology for fast propagation delays, supporting higher data throughput compared to older bipolar or standard CMOS equivalents.
*    Low Power Consumption:  Characteristic of CMOS design, it features very low static power dissipation, making it suitable for battery-sensitive or power-constrained applications.
*    High Noise Immunity:  CMOS logic levels provide good inherent noise margin, enhancing reliability in electrically noisy environments.
*    Bidirectional Flexibility:  Simplifies PCB design by reducing component count compared to using separate unidirectional buffers.
*    Three-State Outputs:  Allow multiple devices to share a common bus without conflict when disabled.

 Limitations: 
*    Limited Drive Capability:  While improved over basic CMOS, its output current drive (typically ±24mA for the MB8264 series) may be insufficient for directly driving heavy loads, long traces, or multiple devices without additional buffering.
*    ESD Sensitivity:  As a CMOS device, it is susceptible to Electrostatic Discharge (ESD). Strict handling and PCB design precautions are mandatory.
*    Obsolescence Risk:  As a specific part number from FUJI, it may be subject to end-of-life (EOL) notifications. Designers should verify long-term availability and

Alternative Part Number

  • HM62864P-10 --: 64Kx1 static RAM with 100ns access time, pin-compatible with the MB8264A and widely available as a direct functional replacement.
  • TMS4164-15NL --: 64Kx1 DRAM in the same DIP package and access-time class, commonly used as a substitute in legacy designs.
  • MSM5164-10 --: 64Kx1 memory device with comparable speed and pinout, suitable as a drop-in alternative for the Fuji part.
  • CY7C164-10 --: 64Kx1 asynchronous SRAM with 100ns cycle time, functionally equivalent and commonly used as a drop-in replacement for MB8264A series parts.
  • TMS4164-10 --: 64Kx1 dynamic RAM with 100ns access time, suitable alternative when DRAM refresh is acceptable in the target design.
  • HM6264ALP-10 --: Pin-compatible 8Kx8 low-power CMOS SRAM with 100ns access time, direct functional replacement for the MB8264A-10.
  • CY7C185-25PC --: 8Kx8 asynchronous SRAM in the same DIP package with compatible pinout; verify access time meets the 100ns requirement.
  • IS61C64AL-10N --: 8Kx8 high-speed CMOS SRAM with 100ns access time and standard pinout, suitable drop-in alternative for the Fujitsu part.

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