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MBM29LV160TE-90 from FUJI

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MBM29LV160TE-90

Manufacturer: FUJI, FUJITSU

FLASH MEMORY 16M (2M x 8/1M x 16) BIT

Partnumber Manufacturer Quantity Availability
MBM29LV160TE-90,MBM29LV160TE90 FUJI, FUJITSU 295 In Stock

Description and Introduction

FLASH MEMORY 16M (2M x 8/1M x 16) BIT The **MBM29LV160TE-90** is a flash memory device manufactured by **FUJITSU**. Below are its specifications, descriptions, and features based on factual information from Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** FUJITSU  
- **Part Number:** MBM29LV160TE-90  
- **Memory Type:** Flash  
- **Density:** 16 Megabit (2M x 8-bit / 1M x 16-bit)  
- **Access Time:** 90 ns  
- **Supply Voltage:** 2.7V - 3.6V  
- **Organization:**  
  - **x8 Mode:** 2,097,152 words × 8 bits  
  - **x16 Mode:** 1,048,576 words × 16 bits  
- **Package Type:** 48-pin TSOP (Thin Small Outline Package)  
- **Operating Temperature Range:** Commercial (0°C to +70°C) or Industrial (-40°C to +85°C) (varies by model)  
- **Sector Architecture:**  
  - **Boot Sector:** 16 KB (top or bottom)  
  - **Main Sectors:** 8 KB, 32 KB, or 64 KB  

### **Descriptions:**  
- The **MBM29LV160TE-90** is a **16Mbit (2MB) CMOS flash memory** designed for high-performance, low-power applications.  
- It supports **both 8-bit and 16-bit data bus configurations**, making it flexible for different system designs.  
- Features **asynchronous read operations** with a fast access time of **90 ns**.  
- Includes a **boot sector architecture** for flexible code storage (top or bottom boot block).  

### **Features:**  
- **Single Power Supply:** Operates at **2.7V to 3.6V**, suitable for low-power systems.  
- **Sector Erase Capability:** Allows individual sector erasure (16 KB, 8 KB, 32 KB, or 64 KB).  
- **Fast Programming Time:** Byte/word programming in **7 µs (typical)**.  
- **Low Power Consumption:**  
  - **Active Read Current:** 20 mA (typical)  
  - **Standby Current:** 1 µA (typical)  
- **Hardware Data Protection:**  
  - **Write Protection** via control pin or power transition lockout.  
  - **Temporary Sector Unprotect** for secure data modification.  
- **Compatibility:** Supports **JEDEC-standard** commands and pinouts.  
- **Reliability:**  
  - **Endurance:** 100,000 write/erase cycles per sector.  
  - **Data Retention:** 20 years (minimum).  

This information is strictly based on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

FLASH MEMORY 16M (2M x 8/1M x 16) BIT

Alternative Part Number

  • AM29LV160DB-90EI --: Pin-compatible 16 Mbit 3V NOR flash with the same 90 ns access time and identical command set, widely available as a direct second source.
  • S29GL016A90TFIR2 --: 16 Mbit 3V parallel NOR flash in the same TSOP-48 footprint with 90 ns speed, suitable drop-in replacement after minor timing review.
  • MX29LV160DBTI-90G --: Cost-effective 16 Mbit 3V NOR flash with compatible pinout and 90 ns access time, commonly used as an alternative to Fuji MBM29LV160 devices.
  • S29GL016A-90TFI010 --: 16 Mbit 3V page-mode NOR flash with 90 ns speed grade; Spansion continued the AMD/Fujitsu flash line, offering similar timing and interface compatibility.

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