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ZXMD63C03X from ZETEX/DI

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ZXMD63C03X

Manufacturer: ZETEX/DI

30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET

Partnumber Manufacturer Quantity Availability
ZXMD63C03X ZETEX/DI 7000 In Stock

Description and Introduction

30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET The ZXMD63C03X is a power MOSFET manufactured by ZETEX/Diodes Incorporated. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** ZETEX/DI (Diodes Incorporated)  
- **Type:** P-Channel Enhancement Mode MOSFET  
- **Drain-Source Voltage (VDS):** -30V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Continuous Drain Current (ID):** -6.3A  
- **Pulsed Drain Current (IDM):** -25A  
- **Power Dissipation (PD):** 2.5W  
- **On-Resistance (RDS(on)):** 50mΩ (max) at VGS = -10V  
- **Threshold Voltage (VGS(th)):** -1V to -3V  
- **Package:** SOT-223  

### **Descriptions:**  
- Designed for low-voltage, high-efficiency power switching applications.  
- Suitable for battery management, load switching, and power distribution.  

### **Features:**  
- Low on-resistance for reduced conduction losses.  
- Fast switching performance.  
- Enhanced thermal characteristics due to SOT-223 package.  
- Logic-level gate drive compatibility.  

For further details, refer to the official datasheet from Diodes Incorporated.

Partnumber Manufacturer Quantity Availability
ZXMD63C03X ZETEX 40 In Stock

Description and Introduction

30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET The ZXMD63C03X is a power MOSFET manufactured by ZETEX (now part of Diodes Incorporated). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**  
- **Manufacturer:** ZETEX (now Diodes Incorporated)  
- **Type:** N-Channel MOSFET  
- **Drain-Source Voltage (VDS):** 30V  
- **Continuous Drain Current (ID):** 6.3A  
- **Pulsed Drain Current (IDM):** 25A  
- **Power Dissipation (PD):** 2.5W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(ON)):** 0.1Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 1V (min), 2.5V (max)  
- **Package:** SOT23-3  

### **Descriptions:**  
- The ZXMD63C03X is a low-voltage N-channel MOSFET designed for high-efficiency power switching applications.  
- It is optimized for low on-resistance and fast switching performance.  

### **Features:**  
- Low threshold voltage for compatibility with logic-level drive circuits.  
- Low on-resistance (RDS(ON)) for reduced conduction losses.  
- Fast switching speed for improved efficiency in DC-DC converters and power management applications.  
- Compact SOT23-3 package for space-constrained designs.  

This information is based on the manufacturer's datasheet and technical documentation.

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