GA400TD60U ,600V UltraFast 10-30 kHz Half-Bridge IGBT in a Dual INT-A-Pak packageFeaturesV = 600V Generation 4 IGBT technology CES UltraFast: Optimized for high operating frequ ..
GA4F4M ,RESISTOR BUILT-IN TYPE NPN TRANSISTORDATA SHEETSILICON TRANSISTORGA4xxxRESISTOR BUILT-IN TYPE NPN TRANSISTOR
GA600GD25S ,250V DC-1 kHz (Standard) Single IGBT in a Dual INT-A-Pak packagePD - 50071CTMStandard Speed IGBTSINGLE SWITCH IGBT DUAL INT-A-PAKV = 250V Stand ..
GA75TS60U ,600V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak packageFeaturesV = 600V Generation 4 IGBT technology CES UltraFast: Optimized for high operating frequ ..
GAL16LV8C-10LJN , Low Voltage E2CMOS PLD Generic Array Logic™
GAL16LV8C-15LJN , Low Voltage E2CMOS PLD Generic Array Logic™
GRM40Y5V105Z16 , 150MA SOT-23 ULTRA LOW NOISE CMOS RF-LDO REGULATOR
GRM40Y5V105Z16 , 150MA SOT-23 ULTRA LOW NOISE CMOS RF-LDO REGULATOR
GRM43DR72J104KW01L , Chip Monolithic
GRM55ER72A475KA01L , 225MHz TO 1215MHz, 9W GaN WIDEBAND
GA400TD60U
600V UltraFast 10-30 kHz Half-Bridge IGBT in a Dual INT-A-Pak package
International
TOR Rectifier
"HALF-BRIDGE" IGBT DUAL INT-A-PAK
Features
. Generation 4 IGBT technology
. UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200 5
kHz in resonant mode
. Very low conduction and switching losses
PD - 50059D
GA400TD60U
Ultra-Fastm Speed IGBT
. HEXFRED'" antiparallel diodes with ultra- soft 4 5
recovery
. Industry standard package
. UL approved
Benefits
. Increased operating efhciency
. Direct mounting to heatsink
. Performance optimized for power conversion: UPS,
SMPS, Welding
. Lower EMI, requires less snubbing
7 @VGE = 15V, lc = 400A
2 vCEm typ. = 1.70V
VCES = 600V
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
k: @ Tc = 25°C Continuous Collector Current 400
ICM Pulsed Collector Current0D 800 A
ILM Peak Switching Current© 800
IFM Peak Diode Forward Current 800
VGE Gate-to-Emitter Voltage $20 V
VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min 2500
Pro @ Tc = 25°C Maximum Power Dissipation 1250 W
PD @ Tc = 85°C Maximum Power Dissipation 650
To Operating Junction Temperature Range -40 to +150 ''C
TSTG Storage Temperature Range -40 to +125
Thermal I Mechanical Characteristics
Parameter Typ. Max. Units
ReJC Thermal Resistance, Junction-to-Case - IGBT - 0.10
ReJC Thermal Resistance, Junction-to-Case - Diode - 0.20 ''C/W
Recs Thermal Resistance, Case-to-Sink - Module 0.1 -
Mounting Torque, Case-to-Heatsink © - 6.0 N.m
Mounting Torque, Case-to-Terminal 1, 2 & 30) - 5.0
Weight of Module 400 - g
1
05/15/02
GA400TD60U
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
(SR)CES Collector-to-Emitter Breakdown Voltage 600 - - VGE = 0V, k: = 1mA
V0.30”) Collector-to-Emitter Voltage - 1.7 2.4 VGE = 15V, Ic = 400A
- 1.8 - V VGE = 15V, lc = 400A, Tu = 125°C
VGE(1h) Gate Threshold Voltage 3.0 - 6.0 k: = 2.5mA
AVGEWIATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = VGE, IC = 2.5mA
gfe Forward Transconductance co - 481 - S VCE = 25V, lc = 400A
ICES Collector-to-Emitter Leaking Current - - 2.0 mA VGE = ov, ch = 600V
- - 20 VGE = 0V, VCE = 600V, To = 125°C
VFM Diode Forward Voltage - Maximum - 3.7 - V V = 400A, VGE = 0V
- 3.6 - V = 400A, VGE = 0V, To = 125°C
lees Gate-to-Emitter Leakage Current - - 500 nA VGE = 120V
Dynamic Characteristics - To = 125°C (unless
otherwise specified)
Parameter Min. Typ. Max. Units Conditions
09 Total Gate Charge (turn-on) - 1806 2709 Vcc = 400V
Qge Gate - Emitter Charge (turn-on) - 251 376 nC Ic = 270A ,VGE = 15V
Qgc Gate - Collector Charge (turn-on) - 612 918 To = 25°C
tdwn) Turn-On Delay Time - 1033 - RG1 = 159, R62 = on,
tr Rise Time - 335 - ns lc = 400A
Mott) Turn-Off Delay Time - 688 - Vcc = 360V
t, Fall Time - 225 - VGE = t151/
Eon Turn-On Switching Energy - 26 - mJ
Eoff(1) Turn-Off Switching Energy - 48 -
Ets (1) Total Switching Energy - 74 89
Cies Input Capacitance - 40136 - VGE = 0V
Goes Output Capacitance - 2509 - pF Vcc = 30V
Cres Reverse Transfer Capacitance - 522 - f = 1 MHz
trr Diode Reverse Recovery Time - 232 - ns Ic = 400A
|rr Diode Peak ReverseCurrent - 141 - A RG1 = 159
G, Diode Recovery Charge - 16292 - nC RG2 = on
di(rec)M/dt Diode Peak Rate of Fall of Recovery - 1641 - Alps Vcc = 360V
During h, di/dt=1300Alps
2
