HFA04TB60 ,600V 4A HEXFRED Discrete Diode in a TO-220AC packageapplications wherehigh speed, high efficiency is needed.Absolute Maximum Ratings Param ..
HFA04TB60 ,600V 4A HEXFRED Discrete Diode in a TO-220AC packageFeaturesV = 600VR• Ultrafast Recovery4• Ultrasoft RecoveryV = 1.8VF• Very Low IRRM• Very Low Qr ..
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HFA04TB60
600V 4A HEXFRED Discrete Diode in a TO-220AC package
International
Tart, Rectifier
Bulletin PD -2.399 rev.A 11/00
H FAO4TB6O
HEXFRED'" Ultrafast, Soft Recovery Diode
Features “$39502
. UltrafastRecovery
. Ultrasoft Recovery
. Very Low IRRM
. Very Low Qn
. SpetyTed at Operating Conditions 2
Benefits l a
. Reduced RFI and EMI 2
VR = 600V
VF = 1.8V
er * = 40nC
di(rec)M/dt * = 280A/ps
* 125°C
. Reduced Power Loss in Diode and Switching
Transistor
. Higher Frequency Operation
. Reduced Snubbing
. Reduced Parts Count
Description
International Rectifier's HFA04TB60 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 8 amps per Leg continuous current, the
HFA04TB60 is especially well suited for use as the companion diode for IGBTs
and MOSFETs. In addition to ultra fast recoverytime, the HEXFRED product line
features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-of" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The HEXFRED HFA04TB60 is
ideally suited for applications in power supplies and power conversion systems
(such as inverters), motor drives, and many other similar applications where
high speed, high efficiency is needed.
Absolute Maximum Ratings
TO-220AC
Parameter Max Units
VR Cathode-to-Mode Voltage 600 V
IF @ Tc = 100°C Continuous Forward Current 4.0
IFSM Single Pulse Forward Current 25 A
IFRM Maximum Repetitive Forward Current 16
Po @ Tc = 25°C Maximum Power Dissipation 25 W
PD @ Tc = 100°C Maximum Power Dissipation 10
TJ O eratin Junction and
TsTG Stgrage $emperature Range -55 to +150 C
HFA04TB60
Bulletin PD-2.399 rev.A 11/00
International
IEZR Rectifier
Electrical Characteristics ti) To = 25°C (unless otherwise specified)
Parameter Min Typ Max Units Test Conditions
VBR Cathode Anode Breakdown Voltage 600 V IR = 100pA
1.5 1.8 IF = 4.0A
VFM Max Forward Voltage 1.8 2.2 V IF = 8.0A See Fig. 1
1.4 1.7 IF = 4.0A, Tu = 125°C
IRM Max Reverse Leakage Current 0.17 3.0 pA VR = VR Rated See Fig. 2
44 300 T, = 125°C, VR = 0.8 x VR Rated
CT Junction Capacitance 4.0 8.0 pF VR = 200V See Fig. 3
Ls Series In ductance 8.0 nH Measured lead to lead 5mm from
package body
Dynamic Recovery Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min Typ Max Units Test Conditions
trr Reverse Recovery Time 17 IF = 1.0A, dif/dt = 200A/ps, VR = 30V
tm See Fig. 5, 6 & 16 28 42 ns T: = 25''C
trr2 38 57 TJ =125°C IF = 4.0A
|RRM1 Peak Recovery Current 2.9 5.2 To = 25''C
IRRMZ See Fig. " 8 3.7 67 TJ =125°C VR = 200V
Qm Reverse Recovery Charge 40 60 T: = 25''C
an See Fig. 9 & 10 70 105 TJ = 125°C dit/dt = 200Nps
di(,ec)M/dt1 Peak Rate of Fall of Recovery Current 280 Alps T: = 25°C
di(,ec)M/dt2 During tb See Fig. 11 & 12 235 TJ = 125°C
Thermal - Mechanical Characteristics
Parameter Min Typ Max Units
Tlead® Lead Temperature 300 "C
RthJC Thermal Resistance, Junction to Case 5.0
thA® Thermal Resistance, Junction to Ambient 80 KAN
Rms© Thermal Resistance, Case to Heat Sink 0.5
Wt Weight 2.0 g
0.07 (oz)
T Mounting Torque 6.0 12 ltT
5.0 10 Ibrin
C) 0.063 in. from Case (1.6mm) for 10 sec
© Typical Socket Mount
© Mounting Surface, Flat, Smooth and Greased
