2M (256K X 8/128K X 16) BIT The **MBM29F200BC-55PFTN** is a flash memory device manufactured by **Fujitsu (FUJ)**. Below are its key specifications, descriptions, and features:
### **Specifications:**
- **Memory Type:** Flash (NOR)
- **Capacity:** 2 Mbit (256K x 8-bit or 128K x 16-bit)
- **Supply Voltage:** 5V ± 10%
- **Access Time:** 55 ns
- **Operating Temperature Range:** -40°C to +85°C
- **Package:** 44-Pin TSOP (Thin Small Outline Package)
- **Interface:** Parallel
- **Sector Architecture:** Uniform 64K-byte sectors
### **Descriptions:**
- The **MBM29F200BC-55PFTN** is a high-performance **5V-only** flash memory device.
- It supports both **byte (x8)** and **word (x16)** configurations for flexible system integration.
- Designed for **high-speed read operations**, making it suitable for embedded applications.
- Features **sector erase capability**, allowing individual 64K-byte blocks to be erased independently.
### **Features:**
- **Single 5V Power Supply** (no additional voltage required for programming/erasing).
- **Low Power Consumption:**
- Active Read Current: 30 mA (typical)
- Standby Current: 100 µA (typical)
- **Fast Erase & Program Times:**
- Sector Erase Time: 1 second (typical)
- Byte/Word Program Time: 20 µs (typical)
- **Hardware Data Protection:**
- Built-in **write prevention** during power transitions.
- **VPP (Programming Voltage) pin** for additional security.
- **Reliable Data Retention:** 100 years (minimum).
- **Compatible with JEDEC Standards** for easy integration.
This flash memory is commonly used in **industrial, automotive, and embedded systems** requiring non-volatile storage.
*(Note: Always refer to the official datasheet for detailed technical information.)*
