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MBR150TR
50V 1A Schottky Discrete Diode in a DO-204AL package
applications are in switchingI Rectangular 1.0 Apower supplies, converters, free-wheeling diodes, andF(AV)waveformreverse battery protection.Low profile, axial leaded outlineV 50/60 VRRMHigh purity, high temperature epoxy encapsulation forenhanced mechanical strength and moisture resistanceI @ tp = 5 µs sine 150 AFSMVery low forward voltage dropV @ 1 Apk, T = 125°C 0.65 V High frequency operation F J Guard ring for enhanced ruggedness and long termreliabilityT range - 40 to 150 °CJCASE STYLE AND DIMENSIONSConform to JEDEC Outline DO-204AL (DO-41)Dimensions in millimeters and inches 1MBR150, MBR160Bulletin PD-20589 rev. B 03/03Voltage RatingsPart number MBR150 MBR160V Max. DC Reverse Voltage (V) 50 60RV Max. Working Peak Reverse Voltage (V)RWMAbsolute Maximum RatingsParameters Value Units ConditionsI Max. Average Forward Current 1.0 A 50% duty cycle @ T = 75°C, rectangular wave formF(AV) C* See Fig. 4I Max. Peak One Cycle Non-Repetitive 150 5µs Sine or 3µs Rect. pulse Following any ratedFSMA load condition and withSurge Current * See Fig. 6 25 10ms Sine or 6ms Rect. pulserated V appliedRRM E Non-Repetitive Avalanche Energy 2.0 mJ T = 25 °C, I = 1 Amps, L = 4 mHAS J AS I Repetitive Avalanche Current 1.0 A Current decaying linearly to zero in 1 µsecARFrequency limited by T max. V = 1.5 x V typicalJ A R
