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HY29LV160BT-12 from HYUNDAI

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15.625ms

HY29LV160BT-12

Manufacturer: HYUNDAI

16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory

Partnumber Manufacturer Quantity Availability
HY29LV160BT-12,HY29LV160BT12 HYUNDAI 127 In Stock

Description and Introduction

16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory The HY29LV160BT-12 is a 16Mbit (2M x 8-bit or 1M x 16-bit) CMOS flash memory manufactured by Hyundai. Below are its key specifications:  

- **Memory Organization**:  
  - 2,097,152 words x 8 bits (byte mode)  
  - 1,048,576 words x 16 bits (word mode)  

- **Supply Voltage**:  
  - 2.7V to 3.6V  

- **Access Time**:  
  - 120 ns (maximum)  

- **Operating Current**:  
  - 20 mA (typical read current)  
  - 30 mA (typical program/erase current)  

- **Standby Current**:  
  - 1 µA (typical CMOS standby)  

- **Sector Architecture**:  
  - 16 uniform 64Kword (128Kbyte) sectors  

- **Endurance**:  
  - 100,000 program/erase cycles per sector (minimum)  

- **Data Retention**:  
  - 20 years (minimum)  

- **Package Options**:  
  - 48-pin TSOP (Type I)  

- **Interface**:  
  - Supports both 8-bit and 16-bit data bus configurations  

- **Operating Temperature Range**:  
  - Commercial (0°C to +70°C)  
  - Industrial (-40°C to +85°C)  

- **Additional Features**:  
  - Single power supply operation  
  - Sector erase and chip erase capability  
  - Hardware and software data protection  

This information is based on the manufacturer's datasheet.

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