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MT4LC1M16E5DJ-5 from MICRON

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MT4LC1M16E5DJ-5

Manufacturer: MICRON, MIC

EDO DRAM

Partnumber Manufacturer Quantity Availability
MT4LC1M16E5DJ-5,MT4LC1M16E5DJ5 MICRON, MIC 828 In Stock

Description and Introduction

EDO DRAM # Introduction to the MT4LC1M16E5DJ-5 Electronic Component  

The **MT4LC1M16E5DJ-5** is a high-performance **16Mbit (1M x 16) CMOS synchronous DRAM (SDRAM)** designed for applications requiring fast data access and efficient memory management. This component operates at a **5V supply voltage**, making it suitable for a range of industrial and embedded systems where reliability and speed are critical.  

Featuring a **synchronous interface**, the MT4LC1M16E5DJ-5 allows for precise timing control, ensuring seamless integration with microprocessors and other digital logic circuits. Its **16-bit wide data bus** enhances data throughput, supporting high-speed operations in real-time processing environments.  

Key specifications include a **burst mode capability**, which optimizes sequential memory access, and an auto-refresh function that maintains data integrity. With a **CAS latency of 3 cycles**, this SDRAM balances performance and power efficiency, making it ideal for applications such as networking equipment, automotive systems, and industrial controllers.  

The MT4LC1M16E5DJ-5 is housed in a **54-pin TSOP-II package**, providing a compact footprint while ensuring robust electrical connections. Its **industrial-grade temperature range** ensures stable operation in demanding environments.  

Engineers and designers seeking a dependable **5V SDRAM solution** will find the MT4LC1M16E5DJ-5 a suitable choice for projects requiring moderate memory density, low power consumption, and high-speed data transfer. Its compatibility with standard SDRAM controllers further simplifies system integration.

Application Scenarios & Design Considerations

EDO DRAM

Alternative Part Number

  • IS41LV16100B-50TLI --: 1M x 16 asynchronous DRAM with 50 ns speed grade, functionally equivalent to the Micron part and widely available from ISSI.
  • AS4C1M16E5-50TCN --: Direct 1M x 16 EDO DRAM replacement in the same 50 ns speed class, offered by Alliance Memory as a legacy DRAM source.
  • HY51V16165B-50 --: 1M x 16 fast-page/EDO DRAM with 50 ns access time, suitable as a pin-compatible alternative from a major DRAM vendor.
  • IS41C16256-50J --: 256Kx16 fast page mode DRAM in a 40-pin SOJ package, functionally equivalent to the 1Mx16 EDO/FPM device and widely available as a drop-in replacement.
  • AS4C1M16E5-50JC --: 1Mx16 EDO DRAM in a 40-pin SOJ package with 50ns speed grade, matching the original density, organization, and timing.
  • HY51V16200CJ-50 --: 1Mx16 fast page mode DRAM in a 40-pin SOJ package rated at 50ns, suitable as a pin-compatible substitute for the Micron part.

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